| PART |
Description |
Maker |
| SF15-T3 |
1 A, 300 V, SILICON, SIGNAL DIODE, DO-41
|
SENSITRON SEMICONDUCTOR
|
| CMLD2004S |
SURFACE MOUNT DUAL, HIGH VOLTAGE SILICON SWITCHING DIODES 0.225 A, 300 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp.
|
| BD2004S-13 |
0.225 A, 300 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
DIODES INC
|
| MURX0520 MURX0530 MURX0550 MURX0560 MURX0510 MURX0 |
0.5 Amp Super Fast Recovery Rectifier 100 to 600 Volts 0.5 A, 300 V, SILICON, SIGNAL DIODE
|
MCC[Micro Commercial Components]
Micro Commercial Components, Corp.
|
| 2SK1337 2SK1337TZ-E |
300 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
Silicon N Channel MOS FET
|
Renesas Electronics Corporation
|
| 2SJ486ZU-TL-E 2SJ486ZU-TR-E 2SJ486 |
300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET SC-59A, MPAK-3
Silicon P Channel MOS FET
|
Renesas Electronics Corporation
|
| NTE6359 NTE6355 NTE6362 |
300 A, 1000 V, SILICON, RECTIFIER DIODE
300 A, 400 V, SILICON, RECTIFIER DIODE
300 A, 1400 V, SILICON, RECTIFIER DIODE
|
|
| 1N914BT-10 1N914BT-87Y 1N914BT-12A 1N914BT-85 1N91 |
0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35
0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-35
0.11 A, 40 V, SILICON, SIGNAL DIODE, DO-35
0.2 A, 250 V, SILICON, SIGNAL DIODE, DO-35
0.15 A, 75 V, SILICON, SIGNAL DIODE, DO-35
0.2 A, 40 V, SILICON, SIGNAL DIODE, DO-34
0.05 A, 40 V, SILICON, SIGNAL DIODE, DO-35
0.11 A, 40 V, SILICON, SIGNAL DIODE, DO-34
0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-35
0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-34
0.05 A, 40 V, SILICON, SIGNAL DIODE, DO-34
|
|
| DSEP2X31-03A DSEP2X31-04A DSEP2X31-12A DSEP2X31-06 |
30 A, 300 V, SILICON, RECTIFIER DIODE MINIBLOC-4
30 A, 400 V, SILICON, RECTIFIER DIODE MINIBLOC-4
30 A, 1200 V, SILICON, RECTIFIER DIODE MINIBLOC-4
30 A, 600 V, SILICON, RECTIFIER DIODE MINIBLOC-4
60 A, 1200 V, SILICON, RECTIFIER DIODE MINIBLOC-4
HiPerFREDTM Epitaxial Diode with soft recovery 30 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AC
Versatile Miniature Switch, High Performance
|
IXYS, Corp.
IXYS CORP
|
| BF550 Q62702-F944 |
PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners) 25 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 1N347 1N256 1N2029 1N2370 1N1342B 1N338 |
1 A, 100 V, SILICON, SIGNAL DIODE
1 A, 600 V, SILICON, SIGNAL DIODE
1 A, 400 V, SILICON, SIGNAL DIODE
1 A, 2000 V, SILICON, SIGNAL DIODE
6 A, 100 V, SILICON, RECTIFIER DIODE
|
|
| NTE2404N NTE2404NPN NTE2404 NTE2405 |
300 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Silicon Complementary Transistors Darlington / General Purpose
Silicon Complementary Transistors Darlington, General Purpose
|
NTE[NTE Electronics]
|
|
